%0 Journal Article
%T X-Band Internally-Matched GaN HEMTs<br>X波段GaN HEMT内匹配器件
%A Wang Yong
%A Li Jingqiang
%A Zhang Zhiguo
%A Feng Zhen
%A Song Jianbo
%A Feng Zhihong
%A Cai Shujun
%A Yang Kewu
%A <br>王勇
%A 李静强
%A 张志国
%A 冯震
%A 宋建博
%A 冯志红
%A 蔡树军
%A 杨克武
%J 半导体学报
%D 2008
%I 
%X With a self-developed GaN HEMT,the magnitude of leakage current between gate and drain is reduced to 1E-6A,the breakdown voltage is increased effectively,and the operating characteristic is improved.An MIS-GaN HEMT with 2.5mm gate-width is fabricated.When the operation voltage is 33V,the resultant device delivers a saturation output power of 18.2W,a power gain of 7.6dB,and a peak power added efficiency of 43.0% at a frequency of 8GHz CW.The internally-matched GaN HEMTs with a total gate-width of 2.5mm×4 deliver a saturation output power of 64.5W,a power gain of 7.2dB,and a power added efficiency of 39% at a frequency of 8GHz CW.
%K GaN HEMT
%K internal matching
%K output power
%K power gain
%K power added efficiency<br>GaN
%K HEMT
%K 内匹配
%K 输出功率
%K 功率增益
%K 功率附加效率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=78C254273626DB3BE0CABCE88F08A956&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=9CF7A0430CBB2DFD&sid=5B3A9A8E2DA941E3&eid=F654D651B5009E39&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=4