Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology
氧化鑭薄膜閘極結構與電性並應用在砷化鎵高速場效應電晶體研製

This paper investigates the feasibility of using a lanthanum oxide thin film (La2O3) with a high dielec-tric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT.An E/D mode pHEMT in a single chip was real-ized by selecting the appropriate La2O3 thickness.The thin La2O3 film was characterized:its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and ...