%0 Journal Article
%T Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology<br>氧化鑭薄膜閘極結構與電性並應用在砷化鎵高速場效應電晶體研製
%A Wu Chia-Song
%A Liu Hsing-Chung
%A <br>吴家松
%A 刘兴中
%J 半导体学报
%D 2009
%I 
%X This paper investigates the feasibility of using a lanthanum oxide thin film (La2O3) with a high dielec-tric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT.An E/D mode pHEMT in a single chip was real-ized by selecting the appropriate La2O3 thickness.The thin La2O3 film was characterized:its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and ...
%K lanthanum oxide
%K XRD
%K XPS
%K pHEMTs<br>氧化鑭，閘極蝕刻，高速場效應電晶體
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C2100899A6BCC4D7733586830AFEC762&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=708DD6B15D2464E8&sid=301B834FAE00E7BD&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0