Annealing before gate metal deposition related noise performance in AlGaN/GaN HEMTs
蒸栅前退火与AlGaN/GaN HEMT噪声性能关系的研究

For a further improvement of the noise performance in AlGaN/GaN HEMTs,reducing the relatively high gate leakage current is a key issue.In this paper,an experiment was carried out to demonstrate that one method during the device fabrication process can lower the noise.Two samples were treated differently after gate recess etching:one sample was annealed before metal deposition and the other sample was left as it is.From a comparison of their Ig-Vg characteristics,a conclusion could be drawn that the annealin...