%0 Journal Article
%T Annealing before gate metal deposition related noise performance in AlGaN/GaN HEMTs<br>蒸栅前退火与AlGaN/GaN HEMT噪声性能关系的研究
%A Pang Lei
%A Pu Yan
%A Liu Xinyu
%A Wang Liang
%A Li Chengzhan
%A Liu Jian
%A Zheng Yingkui
%A Wei Ke
%A <br>庞磊
%A 蒲颜
%A 刘新宇
%A 王亮
%A 李诚瞻
%A 刘键
%A 郑英奎
%A 魏珂
%J 半导体学报
%D 2009
%I 
%X For a further improvement of the noise performance in AlGaN/GaN HEMTs,reducing the relatively high gate leakage current is a key issue.In this paper,an experiment was carried out to demonstrate that one method during the device fabrication process can lower the noise.Two samples were treated differently after gate recess etching:one sample was annealed before metal deposition and the other sample was left as it is.From a comparison of their Ig-Vg characteristics,a conclusion could be drawn that the annealin...
%K GaN HEMT
%K annealing before metal deposition
%K gate leakage current
%K noise performance<br>GaN
%K HEMT
%K 蒸栅前退火
%K 栅漏电
%K 噪声性能
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=ABFA27D4D83CE0815A3B0D30A35FE680&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=94C357A881DFC066&sid=3EB5B5D0EDF31971&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11