Influence of Atomic Hydrogen on Transparent Conducting Oxide During Hydrogenated Microcrystalline Si Preparation by PECVD
PECVD沉积微晶硅薄膜过程中氢原子对透明导电膜的影响
Chen Yongsheng,
Wang Jianhu,
Lu Jingxiao,
Yang Gen,
Gao Xiaoyong,
Yang Shi''e,
陈永生,
汪建华,
卢景霄,
杨根,
郜小勇,
杨仕娥
Keywords: TCO,hydrogenated microcrystalline silicon,hydrogen plasma degradation
透明导电氧化物,氢化微晶硅,H等离子体退化,TCO,hydrogenated,microcrystalline,silicon,hydrogen,plasma,degradation,PECVD,沉积,微晶硅,膜过程,氢原子,透明导电膜,影响,Preparation,During,Oxide,Transparent,Atomic,Hydrogen,glass,performance,microcrystalline,silicon,solar,cells,deposition,effective,suppression,during
Abstract:
研究了等离子体放电过程中氢原子对单层SnO2和SnO2/ZnO双层透明导电膜的影响.发现当衬底温度超过150℃,H等离子体处理使SnO2薄膜的透光率显著降低.当在SnO2薄膜表面沉积一层ZnO时,既使ZnO膜的厚度为50nm,也可有效地抑制H原子对SnO2的还原效应,并在SnO2/ZnO双层膜上制备了转换效率为3.8%的微晶硅薄膜太阳电池.
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