%0 Journal Article
%T Influence of Atomic Hydrogen on Transparent Conducting Oxide During Hydrogenated Microcrystalline Si Preparation by PECVD<br>PECVD沉积微晶硅薄膜过程中氢原子对透明导电膜的影响
%A Chen Yongsheng
%A Wang Jianhu
%A Lu Jingxiao
%A Yang Gen
%A Gao Xiaoyong
%A Yang Shi''e
%A <br>陈永生
%A 汪建华
%A 卢景霄
%A 杨根
%A 郜小勇
%A 杨仕娥
%J 半导体学报
%D 2007
%I 
%X 研究了等离子体放电过程中氢原子对单层SnO2和SnO2/ZnO双层透明导电膜的影响.发现当衬底温度超过150℃,H等离子体处理使SnO2薄膜的透光率显著降低.当在SnO2薄膜表面沉积一层ZnO时,既使ZnO膜的厚度为50nm,也可有效地抑制H原子对SnO2的还原效应,并在SnO2/ZnO双层膜上制备了转换效率为3.8%的微晶硅薄膜太阳电池.
%K TCO
%K hydrogenated microcrystalline silicon
%K hydrogen plasma degradation<br>透明导电氧化物
%K 氢化微晶硅
%K H等离子体退化
%K TCO
%K hydrogenated
%K microcrystalline
%K silicon
%K hydrogen
%K plasma
%K degradation
%K PECVD
%K 沉积
%K 微晶硅
%K 膜过程
%K 氢原子
%K 透明导电膜
%K 影响
%K Preparation
%K During
%K Oxide
%K Transparent
%K Atomic
%K Hydrogen
%K glass
%K performance
%K microcrystalline
%K silicon
%K solar
%K cells
%K deposition
%K effective
%K suppression
%K during
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B10E4568AA1183B4&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=DF92D298D3FF1E6E&sid=67C739DC23BADF58&eid=82BCA4C44409DD5C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=5