An Inverter Unified Model of RTT
共振隧穿晶体管的反相器统一模型

By analyzing resonant tunneling transistors (RTTs) synthesized with different device structures and treating RTTs with different device structures as inverter circuits,a unified inverter model for RTTs is established.In this model,the I-V characteristics of an RTT can be derived and analyzed with the same method used to analyze an inverter.The various I-V characteristics of RTTs with different device structures can then be explained with a unified inverter theory.The results derived by this model are in agreement with those of corresponding circuit simulations and experiments.This unified inverter model of RTTs is a powerful tool for the design and analysis of RTTs.