%0 Journal Article
%T An Inverter Unified Model of RTT<br>共振隧穿晶体管的反相器统一模型
%A Guo Weilian
%A Niu Pingjuan
%A Miao Changyun
%A Yu Xin
%A Wang Wei
%A Liang Huilai
%A Zhang Shilin
%A Li Jianheng
%A Song Ruiliang
%A Hu Liuchang
%A Qi Haitao
%A Mao Luhong
%A <br>郭维廉
%A 牛萍娟
%A 苗长云
%A 于欣
%A 王伟
%A 梁惠来
%A 张世林
%A 李建恒
%A 宋瑞良
%A 胡留长
%A 齐海涛
%A 毛陆虹
%J 半导体学报
%D 2007
%I 
%X By analyzing resonant tunneling transistors (RTTs) synthesized with different device structures and treating RTTs with different device structures as inverter circuits,a unified inverter model for RTTs is established.In this model,the I-V characteristics of an RTT can be derived and analyzed with the same method used to analyze an inverter.The various I-V characteristics of RTTs with different device structures can then be explained with a unified inverter theory.The results derived by this model are in agreement with those of corresponding circuit simulations and experiments.This unified inverter model of RTTs is a powerful tool for the design and analysis of RTTs.
%K RTT
%K unified inverter model
%K device structure of RTT
%K I-V characteristics of RTT<br>共振隧穿晶体管
%K 反相器统一模型
%K RTT器件结构
%K RTTI-V特性
%K 共振隧穿
%K 晶体管
%K 反相器
%K 统一模型
%K Unified
%K Model
%K 器件
%K 设计
%K 模拟实验
%K 电路模拟
%K 结果
%K 解释
%K 类型
%K 特性
%K 综合分析
%K 方法
%K 处理
%K 结构
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4159BB42645C58E0&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=CA4FD0336C81A37A&sid=656F8C8401D91023&eid=C753EB8AC8F551B9&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=7