A Monolithic Integrated Long-Wavelength Tunable Photodetector Based on a Low Temperature Buffer Layer
基于低温缓冲层的单片集成长波长可调谐光探测器

We demonstrate a tunable long-wavelength photodetector by using a heteroepitaxy growth of an InP-In0.53Ga0.47-As-InP p-i-n structure on a GaAs-based GaAs/AlAs Fabry-Perot filter structure.High quality heteroepitaxy is realized by employing a thin low-temperature buffer layer,which is carried out in a series of experiments.A wavelength tuning range of 10.0nm,an external quantum efficiency of about 23%,a spectral linewidth of 0.8nm,and a 3dB bandwidth of 6.2GHz are simultaneously obtained in the device.