%0 Journal Article
%T A Monolithic Integrated Long-Wavelength Tunable Photodetector Based on a Low Temperature Buffer Layer<br>基于低温缓冲层的单片集成长波长可调谐光探测器
%A Huang Hui
%A Ren Xiaomin
%A Miao Ang
%A Li Yiqun
%A Wang Rui
%A Huang Yongqing
%A Wang Qi
%A <br>吕吉贺
%A 黄辉
%A 任晓敏
%A 苗昂
%A 李轶群
%A 王睿
%A 黄永清
%A 王琦
%J 半导体学报
%D 2007
%I 
%X We demonstrate a tunable long-wavelength photodetector by using a heteroepitaxy growth of an InP-In0.53Ga0.47-As-InP p-i-n structure on a GaAs-based GaAs/AlAs Fabry-Perot filter structure.High quality heteroepitaxy is realized by employing a thin low-temperature buffer layer,which is carried out in a series of experiments.A wavelength tuning range of 10.0nm,an external quantum efficiency of about 23%,a spectral linewidth of 0.8nm,and a 3dB bandwidth of 6.2GHz are simultaneously obtained in the device.
%K heteroepitaxy
%K tunable
%K photodetector<br>异质外延
%K 可调谐
%K 光电探测器
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5646F94D35B54F6FFD1BC70DFE7A0717&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=708DD6B15D2464E8&sid=68171D3FB779E811&eid=A369E079A2D86222&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=14