Electrical Properties of a PZT Ferroelectric Field Effect Transistor
PZT铁电场效应晶体管电学性能

An n-channel field-effect-transistor(FFET)with a metal/ferroelectric/metal/insulator/Si substrates(MFMIS)structure is fabricated by using a Pb(Zr0.52Ti0.48)O3(PZT)thin film of the preferential orientation of(111)on Si substrates prepared by the RF magnetron sputtering technique integrated with semiconductor technology.The C-V characteristics,I-V characteristics,and data writing speed of the FFET are investigated.The clockwise C-V and counterclockwise Id-Vg hysteresis loops of the n-channel FFET demonstrate that the FFET could realize a memory effect due to the ferroelectric polarization of PZT thin film.The memory window of the FFET is 2V,observed from the C-V and Id-Vg hysteresis curves with Vg swinging between-5 and 5V.