%0 Journal Article
%T Electrical Properties of a PZT Ferroelectric Field Effect Transistor<br>PZT铁电场效应晶体管电学性能
%A Cai Daolin
%A Li Ping
%A Zhai Yahong
%A Zhang Shuren
%A <br>蔡道林
%A 李平
%A 翟亚红
%A 张树人
%J 半导体学报
%D 2007
%I 
%X An n-channel field-effect-transistor(FFET)with a metal/ferroelectric/metal/insulator/Si substrates(MFMIS)structure is fabricated by using a Pb(Zr0.52Ti0.48)O3(PZT)thin film of the preferential orientation of(111)on Si substrates prepared by the RF magnetron sputtering technique integrated with semiconductor technology.The C-V characteristics,I-V characteristics,and data writing speed of the FFET are investigated.The clockwise C-V and counterclockwise Id-Vg hysteresis loops of the n-channel FFET demonstrate that the FFET could realize a memory effect due to the ferroelectric polarization of PZT thin film.The memory window of the FFET is 2V,observed from the C-V and Id-Vg hysteresis curves with Vg swinging between-5 and 5V.
%K RF magnetron sputtering
%K MFMIS
%K FFETs
%K memory window<br>磁控溅射
%K MFMIS
%K 铁电场效应晶体管
%K 存储窗口
%K 电场效应晶体管
%K 电学性能
%K Transistor
%K Field
%K Effect
%K Ferroelectric
%K Properties
%K 存储窗口
%K 调制效应
%K 存储性能
%K 极化
%K 逆时针
%K 滞回曲线
%K 顺时针
%K 写入速度
%K 特性
%K 研究
%K 沟道
%K 结构
%K MFMIS
%K 绝缘层
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5646F94D35B54F6F6321F092B7709EA1&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=708DD6B15D2464E8&sid=FAF71E26421EE61B&eid=F654D651B5009E39&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=15