Gate-structure optimization for high frequency power AlGaN/GaN HEMTs
高频功率AlGaN/GaN HEMT 的栅结构优化

In this paper, the influence of gate-head and gate-source-spacing on the performance of AlGaN/GaN HEMTs was studied. Then suggestions are gotten to improve performance of high frequency power AlGaN/GaN HEMTs by optimizing gate-structure. Reducing field-plate length can effectively enhance gain, and . By reducing field-plate length, the devices with 0.35 gate-length have exhibited a of 30GHz and a of 80GHz.The can be further optimized either by increasing gate-metal thickness, or by using tao-shape gate (the gate with gate-head tends to source side). Reducing gate-source spacing can enhance maximum drain-current and breakdown voltage, which is beneficial to enhance the maximum output power of AlGaN/GaN HEMTs.