%0 Journal Article
%T Gate-structure optimization for high frequency power AlGaN/GaN HEMTs<br>高频功率AlGaN/GaN HEMT 的栅结构优化
%A Wang Dongfang
%A Yuan Tingting
%A Wei Ke
%A Chen Xiaojuan
%A Liu Xinyu
%A <br>王东方
%A 袁婷婷
%A 魏珂
%A 陈晓娟
%A 刘新宇
%J 半导体学报
%D 2010
%I 
%X In this paper, the influence of gate-head and gate-source-spacing on the performance of AlGaN/GaN HEMTs was studied. Then suggestions are gotten to improve performance of high frequency power AlGaN/GaN HEMTs by optimizing gate-structure. Reducing field-plate length can effectively enhance gain, and . By reducing field-plate length, the devices with 0.35 gate-length have exhibited a of 30GHz and a of 80GHz.The can be further optimized either by increasing gate-metal thickness, or by using tao-shape gate (the gate with gate-head tends to source side). Reducing gate-source spacing can enhance maximum drain-current and breakdown voltage, which is beneficial to enhance the maximum output power of AlGaN/GaN HEMTs.
%K AlGaN/GaN HEMT
%K high frequency
%K gate structure
%K power<br>AlGaN/GaN
%K HEMT
%K 高频
%K 栅结构
%K 功率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=79F4C718490C893B1840AC8CB8195CD8&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=94C357A881DFC066&sid=3DE10300D7377C5A&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=0