Effects of Si implantation on the total dose hardness of fully-depleted SIMOX wafers
硅离子注入对全耗尽SIMOX材料总剂量效应的影响

Total dose hardened fully-depleted SOI materials are fabricated on separation by implanted oxygen (SIMOX) materials by silicon ion implantation and annealing.The ID-VG characteristics of pseudo-MOS transistors pre-and post-irradiation are tested with 60Co gamma rays.The chemical bonds and the structure of Si in the buried oxide are also studied by X-ray photoelectron spectroscopy and cross-sectional high-resolution transmission elec-tron microscopy,respectively.The results show that Si nanocrystals in the b...