%0 Journal Article
%T Effects of Si implantation on the total dose hardness of fully-depleted SIMOX wafers<br>硅离子注入对全耗尽SIMOX材料总剂量效应的影响
%A Zhang Shuai
%A Zhang Zhengxuan
%A Bi Dawei
%A Chen Ming
%A Tian Hao
%A Yu Wenjie
%A Wang Ru
%A Liu Zhangli
%A <br>张帅
%A 张正选
%A 毕大炜
%A 陈明
%A 田浩
%A 俞文杰
%A 王茹
%A 刘张李
%J 半导体学报
%D 2009
%I 
%X Total dose hardened fully-depleted SOI materials are fabricated on separation by implanted oxygen (SIMOX) materials by silicon ion implantation and annealing.The ID-VG characteristics of pseudo-MOS transistors pre-and post-irradiation are tested with 60Co gamma rays.The chemical bonds and the structure of Si in the buried oxide are also studied by X-ray photoelectron spectroscopy and cross-sectional high-resolution transmission elec-tron microscopy,respectively.The results show that Si nanocrystals in the b...
%K SOI
%K fully-depleted
%K SIMOX
%K total dose radiation
%K Si nanocrystal<br>SOI，全耗尽，SIMOX，总剂量效应，硅纳米晶体
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=065BE112ED29041857625BEAD946CBB5&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=9CF7A0430CBB2DFD&sid=F276C59E9358D08B&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0