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半导体学报 2008
A Macromodel and Parameter Optimization for the I-V Characteristics of High-Voltage MOSFETs
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Abstract:
This paper presents a macromodel applied to a high-voltage double diffused drain MOSFET(HV DDDMOSFET)after analyzing the distortion between measured curves and simulated curves obtained by the SPICE BSIM model.The macromodel is composed of regular SPICE devices,such as general nMOSFETs,MESFETs and diodes.The structure of the macromodel is simple.It is convenient to use,and it can describe the I-V characteristics correctly.In order to improve the scalability of the macromodel,the MESFET's parameter K1(thresh...
