%0 Journal Article
%T A Macromodel and Parameter Optimization for the I-V Characteristics of High-Voltage MOSFETs<br>高压MOSFET直流特性宏模型的建立与参数优化
%A Xu Jiayi
%A Shi Yanling
%A Ren Zheng
%A Hu Shaojian
%A Wan Xinggong
%A Ding Yanfang
%A Lai Zongsheng
%A <br>许佳宜
%A 石艳玲
%A 任铮
%A 胡少坚
%A 万星拱
%A 丁艳芳
%A 赖宗声
%J 半导体学报
%D 2008
%I 
%X This paper presents a macromodel applied to a high-voltage double diffused drain MOSFET(HV DDDMOSFET)after analyzing the distortion between measured curves and simulated curves obtained by the SPICE BSIM model.The macromodel is composed of regular SPICE devices,such as general nMOSFETs,MESFETs and diodes.The structure of the macromodel is simple.It is convenient to use,and it can describe the I-V characteristics correctly.In order to improve the scalability of the macromodel,the MESFET's parameter K1(thresh...
%K MESFET<br>高压双扩散漏MOS晶体管
%K 尺寸可缩放宏模型
%K SPICE模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=3162C71B00B5F84D819E7A8E6297D8C9&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=5D311CA918CA9A03&sid=E0EA1E85C42D382D&eid=CA107AA458C36D25&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8