Influence of the Trapping Effect on Temperature Characteristics in 4H-SiC MESFETs
陷阱效应对4H-SiC MESFET温度特性的影响

Based on the DC model and the self-heating model of SiC MESFETs, the self-heating effect is investigated in detail.The back-gated effect and its influence on high temperature characteristics are studied.The simulation results show that the activation energy of the traps is 1.07eV with a capture cross section of 1e-8cm2.The back-gate potential increases as trap concentration increases, and it reaches ~3V at room temperature.As the drain voltage increases, the back-gate potential decreases.The proposed model is valuable in the design of high-power and high-temperature applications.