%0 Journal Article
%T Influence of the Trapping Effect on Temperature Characteristics in 4H-SiC MESFETs<br>陷阱效应对4H-SiC MESFET温度特性的影响
%A Zhang Yimen
%A Zhang Yuming
%A Che Yong
%A Wang Yuehu
%A <br>吕红亮
%A 张义门
%A 张玉明
%A 车勇
%A 王悦湖
%J 半导体学报
%D 2008
%I 
%X Based on the DC model and the self-heating model of SiC MESFETs, the self-heating effect is investigated in detail.The back-gated effect and its influence on high temperature characteristics are studied.The simulation results show that the activation energy of the traps is 1.07eV with a capture cross section of 1e-8cm2.The back-gate potential increases as trap concentration increases, and it reaches ~3V at room temperature.As the drain voltage increases, the back-gate potential decreases.The proposed model is valuable in the design of high-power and high-temperature applications.
%K The proposed model is valuable in the design of high-power and high-temperature applications<br>SiC
%K MESFET
%K 自热效应
%K 深能级陷阱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=309584AA5C247339B3504187E2FCEED3&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=0B39A22176CE99FB&sid=9DC563A0FEFC04F9&eid=5FF9F4F7CB1800C7&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9