High peak-to-valley current ratio In0.53Ga0.47As/AlAs resonant tunneling diode with a high doping emitter
高峰谷电流比的高掺杂发射区In0.53Ga0.47As/AlAs共振隧穿二极管

An In0.53Ga0.47As/AlAs resonant tunneling diode (RTD) with a high doping emitter is designed and fabricated using air bridge technology. The RTD exhibits a high peak-to-valley current ratio (PVCR) of more than 40 at room temperature, with a peak current density of 24 kA/cm2. The extraction of device parameters from DC and microwave measurements is presented together with an RTD equivalent circuit. The high PVCR RTD with small intrinsic capacitance is favorable for microwave/THz applications.