%0 Journal Article
%T High peak-to-valley current ratio In0.53Ga0.47As/AlAs resonant tunneling diode with a high doping emitter<br>高峰谷电流比的高掺杂发射区In0.53Ga0.47As/AlAs共振隧穿二极管
%A Wang Wei
%A Sun Hao
%A Teng Teng
%A Sun Xiaowei
%A <br>王伟
%A 孙浩
%A 滕腾
%A 孙晓玮
%J 半导体学报
%D 2012
%I 
%X An In0.53Ga0.47As/AlAs resonant tunneling diode (RTD) with a high doping emitter is designed and fabricated using air bridge technology. The RTD exhibits a high peak-to-valley current ratio (PVCR) of more than 40 at room temperature, with a peak current density of 24 kA/cm2. The extraction of device parameters from DC and microwave measurements is presented together with an RTD equivalent circuit. The high PVCR RTD with small intrinsic capacitance is favorable for microwave/THz applications.
%K resonant tunneling diode
%K I-V characteristics
%K peak-to-valley current ratio
%K equivalent circuit
%K ewline S-parameters<br>共振隧穿二极管
%K I-V特性
%K 峰谷电流比
%K 等效电路
%K S参数
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=3A1389981F84318347D55BE6CF686EF7&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=59906B3B2830C2C5&sid=7BA533019CBD9DDA&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13