Metal Induced Lateral Crystallization Poly-Si Thin Film Transistors of Self-Released Nickel Source
自缓释镍源的横向诱导晶化多晶硅薄膜晶体管

Nickel-silicon alloy target is used as a source of sputtering;a new type of nickel source,called a self-released nickel source,is fabricated.Self-released nickel source can control the crystallization rate efficiently and the obtained poly-Si material has a low level of nickel residue and high quality.p-type thin film transistors are fabricated using this kind of poly-Si as active islands.They have good performance and lower leakage current.