%0 Journal Article
%T Metal Induced Lateral Crystallization Poly-Si Thin Film Transistors of Self-Released Nickel Source<br>自缓释镍源的横向诱导晶化多晶硅薄膜晶体管
%A Liu Zhaojun
%A Meng Zhiguo
%A Zhao Sunyun
%A Wong Man
%A Kwok H S
%A Wu Chunya
%A Xiong Shaozhen
%A <br>刘召军
%A 孟志国
%A 赵淑云
%A 王文
%A 郭海成
%A 吴春亚
%A 熊绍珍
%J 半导体学报
%D 2008
%I 
%X Nickel-silicon alloy target is used as a source of sputtering;a new type of nickel source,called a self-released nickel source,is fabricated.Self-released nickel source can control the crystallization rate efficiently and the obtained poly-Si material has a low level of nickel residue and high quality.p-type thin film transistors are fabricated using this kind of poly-Si as active islands.They have good performance and lower leakage current.
%K metal induced lateral crystallization
%K poly-silicon thin film
%K low temperature preparation
%K annealing treatment<br>金属诱导横向晶化
%K 多晶硅薄膜
%K 低温制备
%K 退火处理
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=7E634CD3420BE3B17A76C76636F3858C&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=F3090AE9B60B7ED1&sid=DE12191FBD62783C&eid=FF7AA908D58E97FA&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7