OALib Journal期刊
ISSN: 2333-9721
费用:99美元
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Monolithically Fabricated OEICs Using RTD and MSM
Hu Yanlong, Liang Huilai, Li Yihuan, Zhang Shilin, Mao Luhong, Guo Weilian, Hu Yanlong, Liang Huilai, Li Yihuan, Zhang Shilin, Mao Luhong, Guo Weilian
Keywords: resonant tunneling diode,metal-semiconductor-metal photo detector,device simulation,monolithic optoelectronic integration 共振隧穿二极管,金属-半导体-金属光电探测器,器件模拟,单片光电集成,resonant,tunneling,diode,metal-semiconductor-metal,photo,detector,device,simulation,monolithic,optoelectronic,integration,GaAs,working,theory,functions,photocurrent,factor,nearly,results,show,ratio,integrated,circuits,room,temperature,electronic,characteristics,devices,detectors,material,systems,resonant,tunneling,diodes,逻辑功能
Abstract:
报道了GaAs基共振隧穿二极管(RTD)与金属-半导体-金属光电探测器(MSM PD)单片集成的两种光电集成电路,并在室温条件下分别测试了RTD器件、MSM器件和集成电路的电学特性.测试表明:RTD器件的峰谷电流比为4;由于改进了在半绝缘GaAs衬底上制作MSM的方法,5V偏压下的电流由原来的2μA增加到了18μA,基本实现了两种电路的逻辑功能.
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