%0 Journal Article
%T Monolithically Fabricated OEICs Using RTD and MSM
%A Hu Yanlong
%A Liang Huilai
%A Li Yihuan
%A Zhang Shilin
%A Mao Luhong
%A Guo Weilian
%A <br>Hu Yanlong
%A Liang Huilai
%A Li Yihuan
%A Zhang Shilin
%A Mao Luhong
%A Guo Weilian
%J 半导体学报
%D 2006
%I 
%X 报道了GaAs基共振隧穿二极管(RTD)与金属-半导体-金属光电探测器(MSM PD)单片集成的两种光电集成电路,并在室温条件下分别测试了RTD器件、MSM器件和集成电路的电学特性.测试表明:RTD器件的峰谷电流比为4;由于改进了在半绝缘GaAs衬底上制作MSM的方法,5V偏压下的电流由原来的2μA增加到了18μA,基本实现了两种电路的逻辑功能.
%K resonant tunneling diode
%K metal-semiconductor-metal photo detector
%K device simulation
%K monolithic optoelectronic integration<br>共振隧穿二极管
%K 金属-半导体-金属光电探测器
%K 器件模拟
%K 单片光电集成
%K resonant
%K tunneling
%K diode
%K metal-semiconductor-metal
%K photo
%K detector
%K device
%K simulation
%K monolithic
%K optoelectronic
%K integration
%K GaAs
%K working
%K theory
%K functions
%K photocurrent
%K factor
%K nearly
%K results
%K show
%K ratio
%K integrated
%K circuits
%K room
%K temperature
%K electronic
%K characteristics
%K devices
%K detectors
%K material
%K systems
%K resonant
%K tunneling
%K diodes
%K 逻辑功能
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C5AE81EBFDF58BF2&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=E158A972A605785F&sid=9A596D09E9486F3E&eid=9107B2E171152411&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7