A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT
一种基于RTD和HEMT的单片集成逻辑电路
Dai Yang,
Huang Yinglong,
Liu Wei,
Ma Long,
Yang Fuhu,
Wang Liangchen,
Zeng Yiping,
Zheng Houzhi,
戴扬,
黄应龙,
刘伟,
马龙,
杨富华,
王良臣,
曾一平,
郑厚植
Keywords: MOBILE,RTD,HEMT,InGaAs,GaAs
单稳态-双稳态转换逻辑单元,共振隧穿二极管,高电子迁移率晶体管,InGaAs,GaAs,MOBILE,RTD,HEMT,InGaAs,GaAs,HEMT,单片集成,逻辑电路,Resonant,Tunneling,Diodes,Circuit,Logic,Integrated,experimental,result,frequency,operations,circuit,transition,logic,element,gate,length,threshold,voltage,peak,current,density,room,temperature
Abstract:
介绍了一种基于共振隧穿二极管(RTD)和高电子迁移率晶体管(HEMT)的单片集成电路.采用分子束外延技术在GaAs底层上重叠生长了RTD和HEMT结构.RTD室温下的峰谷电流比为5.2∶1,峰值电流密度为22.5kA/cm2.HEMT采用1μm栅长,阈值电压为-1V.设计电路称为单稳态-双稳态转换逻辑单元(MOBILE).实验结果显示了该电路逻辑运行成功,运行频率可达2GHz以上.
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