%0 Journal Article
%T A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT<br>一种基于RTD和HEMT的单片集成逻辑电路
%A Dai Yang
%A Huang Yinglong
%A Liu Wei
%A Ma Long
%A Yang Fuhu
%A Wang Liangchen
%A Zeng Yiping
%A Zheng Houzhi
%A <br>戴扬
%A 黄应龙
%A 刘伟
%A 马龙
%A 杨富华
%A 王良臣
%A 曾一平
%A 郑厚植
%J 半导体学报
%D 2007
%I 
%X 介绍了一种基于共振隧穿二极管(RTD)和高电子迁移率晶体管(HEMT)的单片集成电路.采用分子束外延技术在GaAs底层上重叠生长了RTD和HEMT结构.RTD室温下的峰谷电流比为5.2∶1,峰值电流密度为22.5kA/cm2.HEMT采用1μm栅长,阈值电压为-1V.设计电路称为单稳态-双稳态转换逻辑单元(MOBILE).实验结果显示了该电路逻辑运行成功,运行频率可达2GHz以上.
%K MOBILE
%K RTD
%K HEMT
%K InGaAs
%K GaAs<br>单稳态-双稳态转换逻辑单元
%K 共振隧穿二极管
%K 高电子迁移率晶体管
%K InGaAs
%K GaAs
%K MOBILE
%K RTD
%K HEMT
%K InGaAs
%K GaAs
%K HEMT
%K 单片集成
%K 逻辑电路
%K Resonant
%K Tunneling
%K Diodes
%K Circuit
%K Logic
%K Integrated
%K experimental
%K result
%K frequency
%K operations
%K circuit
%K transition
%K logic
%K element
%K gate
%K length
%K threshold
%K voltage
%K peak
%K current
%K density
%K room
%K temperature
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0B4255B19AEBA362&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=38B194292C032A66&sid=2E01F39B6CBD53DE&eid=50EA2A80A7D254EF&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=6