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半导体学报 2006
Total Dose Gamma Irradiation Effects and AnnealingCharacteristics of a SiGe HBT
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Abstract:
The total-dose radiation effects and annealing characteristics of a SiGe HBT are studied.It is found that the degradation of the current gain is dominated by the increase of Ib.The mechanisms behind the post-damage effects of total-dose radiation are discussed.The chief factor that causes post-damage effects is the increase in the interface states.