%0 Journal Article
%T Total Dose Gamma Irradiation Effects and AnnealingCharacteristics of a SiGe HBT<br>SiGe HBT 60Co γ射线辐照效应及退火特性
%A Niu Zhenhong
%A Guo Qi
%A Ren Diyuan
%A Liu Gang
%A Gao Song
%A <br>牛振红
%A 郭旗
%A 任迪远
%A 刘刚
%A 高嵩
%J 半导体学报
%D 2006
%I 
%X The total-dose radiation effects and annealing characteristics of a SiGe HBT are studied.It is found that the degradation of the current gain is dominated by the increase of Ib.The mechanisms behind the post-damage effects of total-dose radiation are discussed.The chief factor that causes post-damage effects is the increase in the interface states.
%K SiGe HBT
%K ionizing radiation
%K annealing
%K post-damage effect<br>SiGe异质结双极晶体管
%K 电离辐射
%K 退火
%K 后损伤效应
%K SiGe
%K HBT
%K γ射线
%K 辐照效应
%K 退火特性
%K Characteristics
%K Annealing
%K Effects
%K Gamma
%K Irradiation
%K Dose
%K 增长
%K 界面态
%K 室温
%K 机理
%K 损伤
%K 结果表现
%K 退化
%K 电流增益
%K 集电极电流
%K 基极电流
%K 显示
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=CFD245AB7DA1F36E&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=9CF7A0430CBB2DFD&sid=771E2DBBF647F0DE&eid=371466E036DA0FD9&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10