AFM and XPS Study on the Surface and Interface States of CuPc and SiO2 Films

A CuPc/SiO2 sample is fabricated.Its morphology is characterized by atomic force microscopy,and the electron states are investigated by X-ray photoelectron spectroscopy.In order to investigate these spectra in detail,all of these spectra are normalized to the height of the most intense peak,and each component is fitted with a single Gaussian function.Analysis shows that the O element has great bearing on the electron states and that SiO layers produced by spurting technology are better than those produced by oxidation technology.