%0 Journal Article
%T AFM and XPS Study on the Surface and Interface States of CuPc and SiO2 Films
%A Chen Jinhuo
%A Wang Yongshun
%A Zhu Haihu
%A Hu Jiaxing
%A Zhang Fujia
%A <br>Chen Jinhuo
%A Wang Yongshun
%A Zhu Haihu
%A Hu Jiaxing
%A Zhang Fujia
%J 半导体学报
%D 2006
%I 
%X A CuPc/SiO2 sample is fabricated.Its morphology is characterized by atomic force microscopy,and the electron states are investigated by X-ray photoelectron spectroscopy.In order to investigate these spectra in detail,all of these spectra are normalized to the height of the most intense peak,and each component is fitted with a single Gaussian function.Analysis shows that the O element has great bearing on the electron states and that SiO layers produced by spurting technology are better than those produced by oxidation technology.
%K CuPc/SiO2
%K X-ray photoelectron spectroscopy
%K surface and interface analysis<br>CuPc/SiO2
%K X射线光电子能谱
%K 表面界面分析
%K CuPc/SiO2
%K X-ray
%K photoelectron
%K spectroscopy
%K surface
%K and
%K interface
%K analysis
%K CuPc
%K 表面界面
%K 电子状态
%K 研究
%K Films
%K Interface
%K States
%K Surface
%K Analysis
%K element
%K bearing
%K layers
%K better
%K oxidation
%K technology
%K component
%K single
%K Gaussian
%K function
%K normalized
%K height
%K peak
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4ED09B27FEA802DD&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=5D311CA918CA9A03&sid=35D8C930A8A0D2C6&eid=29BFCA84676506CC&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=20