SPT+-IGBT characteristics and optimization
SPT -IGBT的性能研究及优化

A novel advanced soft punch through (SPT) IGBT signed as SPT+-IGBT is investigated. Static and dynamic characteristics are simulated based on the 1200 V device structure and adopted technology. Extensive research on the structure optimization of SPT+-IGBT is presented and discussed. Compared with the structure of conventional IGBT, SPT+-IGBT has a much lower collector-emitter saturation voltage and better switching characteristics. Therefore it is very suitable for applications blocking a voltage higher than 3000 V. In addition, due to the improvement of switching speed achieved by using a thinner chip, SPT+-IGBT is also very competitive in 1200 V and 1700 V applications.