%0 Journal Article
%T SPT+-IGBT characteristics and optimization<br>SPT -IGBT的性能研究及优化
%A Chu Weili
%A Zhu Yangjun
%A Zhang Jie
%A Hu Aibin
%A <br>Chu Weili
%A Zhu Yangjun
%A Zhang Jie
%A Hu Aibin
%J 半导体学报
%D 2013
%I 
%X A novel advanced soft punch through (SPT) IGBT signed as SPT+-IGBT is investigated. Static and dynamic characteristics are simulated based on the 1200 V device structure and adopted technology. Extensive research on the structure optimization of SPT+-IGBT is presented and discussed. Compared with the structure of conventional IGBT, SPT+-IGBT has a much lower collector-emitter saturation voltage and better switching characteristics. Therefore it is very suitable for applications blocking a voltage higher than 3000 V. In addition, due to the improvement of switching speed achieved by using a thinner chip, SPT+-IGBT is also very competitive in 1200 V and 1700 V applications.
%K IGBT
%K SPT+
%K field stop layer
%K carrier stored layer<br>IGBT
%K 改进软穿通
%K 电场截止层
%K 载流子存储层
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4D6BB6A422263A45D233FD30F5A96B22&yid=FF7AA908D58E97FA&vid=339D79302DF62549&iid=CA4FD0336C81A37A&sid=5CD766995C41BDE5&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=6