Accurate Parameter Extraction of Substrate Resistance in an RF CMOS Model Valid up to 20GHz
适用频率达到20GHz的射频CMOS衬底电阻的精确提取

An accurate method to extract substrate resistances of RF MOSFETs is proposed.The extraction method is based on equivalent circuit analysis for the PSP model.This method is experimentally validated on 90nm CMOS technology and predicts the output characteristics of MOSFETs accurately up to 20GHz.