%0 Journal Article
%T Accurate Parameter Extraction of Substrate Resistance in an RF CMOS Model Valid up to 20GHz<br>适用频率达到20GHz的射频CMOS衬底电阻的精确提取
%A Zhao Yuhang
%A Hu Shaojian
%A Ren Zheng
%A <br>赵宇航
%A 胡少坚
%A 任铮
%J 半导体学报
%D 2008
%I 
%X An accurate method to extract substrate resistances of RF MOSFETs is proposed.The extraction method is based on equivalent circuit analysis for the PSP model.This method is experimentally validated on 90nm CMOS technology and predicts the output characteristics of MOSFETs accurately up to 20GHz.
%K PSP model
%K RF modeling
%K RF MOSFETs
%K substrate resistance<br>RF
%K MOSFET射频
%K PSP模型
%K 衬底电阻
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B444DAD2C36F47C330A4EC5B1F8E8FC1&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=E158A972A605785F&sid=8CC50269EED5BB47&eid=3EE58D91F4253193&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8