全部 标题 作者
关键词 摘要

OALib Journal期刊
ISSN: 2333-9721
费用:99美元

查看量下载量

相关文章

更多...

Effects of Passivation and FP Structure on Current Collapse in an AlGaN/GaN HEMT
钝化与场板结构对AlGaN/GaN HEMT电流崩塌的影响

Keywords: current collapse,passivation,field-plate
电流崩塌
,钝化,场板结构

Full-Text   Cite this paper   Add to My Lib

Abstract:

Due to the geometry and polarization of AlGaN/GaN HEMTs, the electric field in the gate-drain region is very high, and is sufficient to produce a tunneling current from the gate metal to the surface of the AlGaN barrier layer. The electrons that tunnel to the semiconductor surface can accumulate on the surface near the gate, resulting in the extension of the depletion region and current collapse. Bias stress measurements were made to determine an AlGaN/GaN HEMT's current collapse. Surface passivation prevents the electrons from getting trapped at the surface, and a field plate suppresses the electric field at the gate edge, thereby reducing the gate leakage by a significant factor. Thus the current collapse can be effectively suppressed by surface passivation and the field-plate structure.

Full-Text

Contact Us

service@oalib.com

QQ:3279437679

WhatsApp +8615387084133