%0 Journal Article
%T Effects of Passivation and FP Structure on Current Collapse in an AlGaN/GaN HEMT<br>钝化与场板结构对AlGaN/GaN HEMT电流崩塌的影响
%A Ma Xiangbai
%A Zhang Jincheng
%A Guo Liangliang
%A Feng Qian
%A Hao Yue
%A <br>马香柏
%A 张进城
%A 郭亮良
%A 冯倩
%A 郝跃
%J 半导体学报
%D 2007
%I 
%X Due to the geometry and polarization of AlGaN/GaN HEMTs, the electric field in the gate-drain region is very high, and is sufficient to produce a tunneling current from the gate metal to the surface of the AlGaN barrier layer. The electrons that tunnel to the semiconductor surface can accumulate on the surface near the gate, resulting in the extension of the depletion region and current collapse. Bias stress measurements were made to determine an AlGaN/GaN HEMT's current collapse. Surface passivation prevents the electrons from getting trapped at the surface, and a field plate suppresses the electric field at the gate edge, thereby reducing the gate leakage by a significant factor. Thus the current collapse can be effectively suppressed by surface passivation and the field-plate structure.
%K current collapse
%K passivation
%K field-plate<br>电流崩塌
%K 钝化
%K 场板结构
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=313D3F38CC84FF3C&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=CA4FD0336C81A37A&sid=B9704B40A4225A24&eid=E44E40A2398D4F2A&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10