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半导体学报 2012
An aluminum nitride photoconductor for X-ray detection
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Abstract:
An AlN photoconductor for X-ray detection has been fabricated, and its response to X-ray irradiation intensity is studied. The photoconductor has a very low leakage current, less than 0.1 nA at an applied voltage of 100 V in the absence of X-ray irradiation. The photocurrent measurement results clearly reveal that the photocurrent is proportional to the square root of the X-ray irradiation intensity, and under relatively high irradiation the photocurrent can reach values one order of magnitude larger than the dark current when a voltage of 100 V is applied across the AlN photoconductor. By using the ABC model the dependence of the photocurrent on the X-ray irradiation intensity is analyzed, and a reasonable interpretation of the physical mechanism is obtained.