%0 Journal Article
%T An aluminum nitride photoconductor for X-ray detection<br>AlN光电导X-射线探测研究
%A Wang Xinjian
%A Song Hang
%A Li Zhiming
%A Jiang Hong
%A Li Dabing
%A Miao Guoqing
%A Chen Yiren
%A Sun Xiaojuan
%A <br>王新建
%A 宋航
%A 李志明
%A 蒋红
%A 黎大兵
%A 缪国庆
%A 陈一仁
%A 孙晓娟
%J 半导体学报
%D 2012
%I 
%X An AlN photoconductor for X-ray detection has been fabricated, and its response to X-ray irradiation intensity is studied. The photoconductor has a very low leakage current, less than 0.1 nA at an applied voltage of 100 V in the absence of X-ray irradiation. The photocurrent measurement results clearly reveal that the photocurrent is proportional to the square root of the X-ray irradiation intensity, and under relatively high irradiation the photocurrent can reach values one order of magnitude larger than the dark current when a voltage of 100 V is applied across the AlN photoconductor. By using the ABC model the dependence of the photocurrent on the X-ray irradiation intensity is analyzed, and a reasonable interpretation of the physical mechanism is obtained.
%K AlN photoconductor
%K X-ray detection
%K recombination<br>AlN光电导
%K X-射线探测
%K 复合
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=12FAD7BF88E1F42A1037546CF97083A4&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=F3090AE9B60B7ED1&sid=BF6EBEDA5CF741F8&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=14