In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz
功率增益截止频率为183GHz的In0.53Ga0.47As/In0.52Al0.48As HEMTs

By epitaxial layer structure design and key fabrication process optimization,a lattice-matched InP-based In0.53Ga0.47As-In0.52Al0.48As HEMT with an ultra high maximum oscillation frequency (fmax) of 183GHz was fabricated.The fmax is the highest value for HEMTs in China.Also,the devices are reported,including the device structure,the fabrication process,and the DC and RF performances.