%0 Journal Article
%T In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz<br>功率增益截止频率为183GHz的In0.53Ga0.47As/In0.52Al0.48As HEMTs
%A Liu Liang
%A Zhang Haiying
%A Yin Junjian
%A Li Xiao
%A Yang Hao
%A Xu Jingbo
%A Song Yuzhu
%A Zhang Jian
%A Niu Jiebin
%A Liu Xunchun
%A <br>刘亮
%A 张海英
%A 尹军舰
%A 李潇
%A 杨浩
%A 徐静波
%A 宋雨竹
%A 张健
%A 牛洁斌
%A 刘训春
%J 半导体学报
%D 2007
%I 
%X By epitaxial layer structure design and key fabrication process optimization,a lattice-matched InP-based In0.53Ga0.47As-In0.52Al0.48As HEMT with an ultra high maximum oscillation frequency (fmax) of 183GHz was fabricated.The fmax is the highest value for HEMTs in China.Also,the devices are reported,including the device structure,the fabrication process,and the DC and RF performances.
%K maximum oscillation frequency/power-gain cutoff frequency
%K high electron mobility transistor
%K InGaAs/InAlAs
%K InP<br>最大振荡频率/功率增益截止频率
%K 高电子迁移率晶体管
%K InGaAs/InAlAs
%K InP
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=BD00ADF1A9D33859FF678BE9E015B757&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=59906B3B2830C2C5&sid=C7BC59D607A1E67B&eid=F488521195FD61A9&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8