MgZnO/ZnO p-n Heterojunctions Fabricated by MOCVD
MgZnO/ZnO p-n异质结的制备与特性

A MgZnO/ZnO p-n heterojunction was grown on GaAs substrate by metal-organic chemical vapor deposition.The I-V characteristics showed a diode characteristic between the n-ZnO and p-MgZnO layers with a threshold voltage of 3.6V.When the injection current attained 50 mA,the emission was visible to the naked eye in the dark.Room temperature measurements,such as the HALL,XRD,PL,and EL spectra were carried out.The PL spectra of the n-ZnO and p-MgZnO layers both showed strong NBE peaks and weak broad DLE peaks.The...