%0 Journal Article
%T MgZnO/ZnO p-n Heterojunctions Fabricated by MOCVD<br>MgZnO/ZnO p-n异质结的制备与特性
%A Dong Xin
%A Zhao Wang
%A Zhang Yuantao
%A Zhang Baolin
%A Li Xiangping
%A Du Guotong
%A <br>董鑫
%A 赵旺
%A 张源涛
%A 张宝林
%A 李香萍
%A 杜国同
%J 半导体学报
%D 2008
%I 
%X A MgZnO/ZnO p-n heterojunction was grown on GaAs substrate by metal-organic chemical vapor deposition.The I-V characteristics showed a diode characteristic between the n-ZnO and p-MgZnO layers with a threshold voltage of 3.6V.When the injection current attained 50 mA,the emission was visible to the naked eye in the dark.Room temperature measurements,such as the HALL,XRD,PL,and EL spectra were carried out.The PL spectra of the n-ZnO and p-MgZnO layers both showed strong NBE peaks and weak broad DLE peaks.The...
%K MOCVD
%K ZnO
%K MgZnO
%K heterojunction
%K EL<br>金属有机化学气相沉积
%K 氧化锌
%K 镁锌氧合金
%K 异质结
%K 电致发光光谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A8F215264592FD77987368163A63FB7B&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=DF92D298D3FF1E6E&sid=298DD318DE734E4F&eid=2AF38D6ACB828704&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=21