全部 标题 作者
关键词 摘要

OALib Journal期刊
ISSN: 2333-9721
费用:99美元

查看量下载量

相关文章

更多...

A Compensation Mechanism for Semi-Insulating 6H-SiC Doped with Vanadium
钒掺杂形成半绝缘6H-SiC的补偿机理

Keywords: 6H-SiC,semi-insulating,vanadium doping,compensation,vanadium acceotor level
6H-SiC
,半绝缘,钒掺杂,补偿,钒受主能级,6H-SiC,semi-insulating,vanadium,doping,compensation,vanadium,acceptor,level

Full-Text   Cite this paper   Add to My Lib

Abstract:

A model is presented to describe a compensation mechanism for semi-insulating 6H-SiC grown with the intentional doping of vanadium.Because we found nitrogen to be the principal shallow donor impurity in SiC by secondary ion mass spectroscopy (SIMS) measurements, semi-insulating properties in SiC are achieved by compensating the nitrogen donor with the vanadium deep acceptor level.The presence of different vanadium charge states V3+ and V4+ is detected by electron paramagnetic resonance and optical absorption measurements, which coincides with the results obtained by SIMS measurements.Both optical absorption and low temperature photoluminescence measurements reveal that the vanadium acceptor level is located at 0.62eV below the conduction band in 6H-SiC.

Full-Text

Contact Us

service@oalib.com

QQ:3279437679

WhatsApp +8615387084133