%0 Journal Article
%T A Compensation Mechanism for Semi-Insulating 6H-SiC Doped with Vanadium<br>钒掺杂形成半绝缘6H-SiC的补偿机理
%A Wang Chao
%A Zhang Yimen
%A Zhang Yuming
%A Wang Yuehu
%A Xu Daqing
%A Li Zhiqiang
%A Chen Liqiang
%A Zhang Jian
%A Zhang Haiying
%A <br>王超
%A 张义门
%A 张玉明
%A 王悦湖
%A 徐大庆
%A 李志强
%A 陈立强
%A 张健
%A 张海英
%J 半导体学报
%D 2008
%I 
%X A model is presented to describe a compensation mechanism for semi-insulating 6H-SiC grown with the intentional doping of vanadium.Because we found nitrogen to be the principal shallow donor impurity in SiC by secondary ion mass spectroscopy (SIMS) measurements, semi-insulating properties in SiC are achieved by compensating the nitrogen donor with the vanadium deep acceptor level.The presence of different vanadium charge states V3+ and V4+ is detected by electron paramagnetic resonance and optical absorption measurements, which coincides with the results obtained by SIMS measurements.Both optical absorption and low temperature photoluminescence measurements reveal that the vanadium acceptor level is located at 0.62eV below the conduction band in 6H-SiC.
%K 6H-SiC
%K semi-insulating
%K vanadium doping
%K compensation
%K vanadium acceotor level<br>6H-SiC
%K 半绝缘
%K 钒掺杂
%K 补偿
%K 钒受主能级
%K 6H-SiC
%K semi-insulating
%K vanadium
%K doping
%K compensation
%K vanadium
%K acceptor
%K level
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=7CC3AE577235163B81B8F9E1F987AE6B&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=0B39A22176CE99FB&sid=9F6DA927E843CD50&eid=79D2EF35F60110C2&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=16