A novel 2-T structure memory device using a Si nanodot for embedded application
可嵌入式应用的新型2T结构硅纳米晶存储器

Performance and reliability of a 2 transistor Si nanocrystal nonvolatile memory (NVM) are investigated. A good performance of the memory cell has been achieved, including a fast program/erase (P/E) speed under low voltages, an excellent data retention (maintaining for 10 years) and good endurance with a less threshold voltage shift of less than 10% after 104 P/E cycles. The data show that the device has strong potential for future embedded NVM applications.