%0 Journal Article
%T A novel 2-T structure memory device using a Si nanodot for embedded application<br>可嵌入式应用的新型2T结构硅纳米晶存储器
%A Yang Xiaonan
%A Wang Yong
%A Zhang Manhong
%A Huo Zongliang
%A Liu Jing
%A Zhang Bo
%A Liu Ming
%A <br>杨潇楠
%A 王永
%A 张满红
%A 霍宗亮
%A 刘璟
%A 张博
%A 刘明
%J 半导体学报
%D 2011
%I 
%X Performance and reliability of a 2 transistor Si nanocrystal nonvolatile memory (NVM) are investigated. A good performance of the memory cell has been achieved, including a fast program/erase (P/E) speed under low voltages, an excellent data retention (maintaining for 10 years) and good endurance with a less threshold voltage shift of less than 10% after 104 P/E cycles. The data show that the device has strong potential for future embedded NVM applications.
%K nonvolatile memory
%K nanocrystal
%K reliability<br>非挥发存储器，纳米晶，可靠性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C6D3D1CB1D1B4FDFEE6207225D91D739&yid=9377ED8094509821&vid=9971A5E270697F23&iid=59906B3B2830C2C5&sid=B84E9F03C18C8C28&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=14