The Origin of Multi-Peak Structures Observed in Photoluminescence Spectra of InAs/GaAs Quantum Dots
InAs/GaAs量子点光致发光光谱多峰结构发光本质

Multi-peak structures in photoluminescence spectra of InAs/GaAs quantum dots are investigated.Excitation power-dependent photoluminescence spectra are used to identify the nature of different peaks.By combining experimental results and an energy-level structure analysis,origins of the multi-peaks are identified.Furthermore,inter-subband spacing of electrons and holes are deduced.